? semiconductor components industries, llc, 2011 october, 2011 ? rev. 4 1 publication order number: ntb25p06/d ntb25p06, NVB25P06 power mosfet ? 60 v, ? 27.5 a, p ? channel d 2 pak designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. features ? aec q101 qualified ? NVB25P06 ? these devices are pb ? free and are rohs compliant typical applications ? pwm motor controls ? power supplies ? converters ? bridge circuits maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain ? to ? source voltage v dss ? 60 v gate ? to ? source voltage ? continuous ? non ? repetitive (t p 10 ms) v gs v gsm 15 20 v vpk drain current ? continuous @ t a = 25 c ? single pulse (t p 10 s) i d i dm 27.5 80 a apk total power dissipation @ t a = 25 c p d 120 w operating and storage temperature range t j , t stg ? 55 to +175 c single pulse drain ? to ? source avalanche energy ? starting t j = 25 c (v dd = 25 v, v gs = 10 v, i l(pk) = 20 a, l = 3 mh, r g = 25 ) e as 600 mj thermal resistance ? junction ? to ? case ? junction ? to ? ambient (note 1) ? junction ? to ? ambient (note 2) r jc r ja r ja 1.25 46.8 63.2 c/w maximum lead temperature for soldering purposes, (1/8 from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. when surface mounted to an fr4 board using 1 pad size (cu area 1.127 in 2 ). 2. when surface mounted to an fr4 board using the minimum recommended pad size (cu area 0.412 in 2 ). http://onsemi.com d 2 pak case 418b marking diagram & pin assignment a = assembly location y = year ww = work week g = pb ? free package device package shipping ? ordering information ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. ntb25p06t4g d 2 pak (pb ? free) 800 / tape & reel ntb 25p06g ayww gate source drain drain ? 60 v 65 m @ ? 10 v i d max v (br)dss r ds(on) typ ? 27.5 a p ? channel d s g NVB25P06t4g d 2 pak (pb ? free) 800 / tape & reel 4 1 2 3
ntb25p06, NVB25P06 http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain ? to ? source breakdown voltage (note 3) (v gs = 0 v, i d = ? 250 a) (positive temperature coefficient) v (br)dss ? 60 ? ? 64 ? ? v mv/ c zero gate voltage drain current (v gs = 0 v, v ds = ? 60 v, t j = 25 c) (v gs = 0 v, v ds = ? 60 v, , t j = 150 c) i dss ? ? ? ? ? 10 ? 100 a gate ? body leakage current (v gs = 15 v, v ds = 0 v) i gss ? ? 100 na on characteristics (note 3) gate threshold voltage (v ds = v gs, i d = ? 250 a) (negative threshold temperature coefficient) v gs(th) ? 2.0 ? ? 2.8 6.2 ? 4.0 ? v mv/ c static drain ? source on ? state resistance (v gs = ? 10 v, i d = ? 12.5 a) (v gs = ? 10 v, i d = ? 25 a) r ds(on) ? ? 0.065 0.070 0.075 0.082 forward transconductance (v ds = ? 10 v, i d = ? 12.5 a) gfs ? 13 ? mhos dynamic characteristics input capacitance (v ds = ? 25 v, v gs = 0 v, f = 1.0 mhz) c iss ? 1200 1680 pf output capacitance c oss ? 345 480 reverse transfer capacitance c rss ? 90 180 switching characteristics (notes 3 & 4) turn ? on delay time (v dd = ? 30 v, i d = ? 25 a, v gs = ? 10 v r g = 9.1 ) t d(on) ? 14 24 ns rise time t r ? 72 118 ns turn ? off delay time t d(off) ? 43 68 ns fall time t f ? 190 320 ns gate charge (v ds = ? 48 v, i d = ? 25 a, v gs = ? 10 v) q t ? 33 50 nc q 1 ? 6.5 ? q 2 ? 15 ? body ? drain diode ratings (note 3) diode forward on ? voltage (i s = ? 25 a, v gs = 0 v) (i s = ? 25 a, v gs = 0 v, t j = 150 c) v sd ? ? ? 1.8 ? 1.4 ? 2.5 ? v reverse recovery time (i s = ? 25 a, v gs = 0 v, di s /dt = 100 a/ s) t rr ? 70 ? ns t a ? 50 ? t b ? 20 ? reverse recovery stored charge q rr ? 0.2 ? c 3. indicates pulse test: pulse width 300 s, duty cycle 2%. 4. switching characteristics are independent of operating junction temperatures.
ntb25p06, NVB25P06 http://onsemi.com 3 50 40 30 20 10 0 0.095 0.085 0.075 0.065 ? v ds , drain ? to ? source voltage (volts) ? i d , drain current (amps) ? v gs , gate ? to ? source voltage (volts) ? i d , drain current (amps) ? i d , drain current (amps) ? i d , drain current (amps) r ds(on) , drain ? to ? source resistance ( ) r ds(on) , drain ? to ? source resistance ( ) t j , junction temperature ( c) ? v ds , drain ? to ? source voltage (volts) r ds(on) , drain ? to ? source resistance (normalized) ? i dss , leakage (na) 1.5 1.75 1.25 1 0.5 100 10 1000 10000 06 4 2 50 figure 1. on ? region characteristics figure 2. transfer characteristics 0 0.2 0.15 0.1 40 30 20 0.05 0 10 50 figure 3. on ? resistance vs. drain current and temperature figure 4. on ? resistance vs. drain current and gate voltage figure 5. on ? resistance variation with temperature figure 6. drain ? to ? source leakage current vs. voltage ? 50 50 25 0 ? 25 75 125 100 28 4 03040 20 10 50 60 40 30 20 10 0 40 30 20 10 50 150 0.75 810 6 ? 8 v v ds 10 v t j = 25 c t j = ? 55 c t j = 125 c t j = 25 c t j = ? 55 c t j = 125 c v gs = ? 10 v v gs = ? 10 v v gs = 0 v t j = 150 c t j = 125 c i d = ? 25 a v gs = ? 10 v ? 9 v ? 7 v ? 6 v ? 5.5 v ? 5 v ? 4.5 v ? 4.2 v v gs = ? 15 v v gs = ? 10 v 45 35 25 15 5 t j = 25 c t j = 25 c
ntb25p06, NVB25P06 http://onsemi.com 4 gate ? to ? source or drain ? to ? source voltage (volts) c, capacitance (pf) q g , total gate charge (nc) ? v gs , gate ? to ? source voltage (volts) r g , gate resistance ( ) ? v sd , source ? to ? drain voltage (volts) ? i s , source current (amps) t, time (ns) ? v ds , drain ? to ? source voltage (volts) t j , starting junction temperature ( c) ? i d , drain current (amps) e as , single pulse drain ? to ? source avalanche energy (mj) 1000 100 10 1 0.1 1000 100 1 10 8 6 4 2 0 600 500 400 300 200 100 0 25 20 15 10 5 0 10 3000 10 2500 15 5 020 2000 1500 1000 0 5 figure 7. capacitance variation figure 8. gate ? to ? source and drain ? to ? source voltage vs. total charge figure 9. resistive switching time variation vs. gate resistance figure 10. diode forward voltage vs. current figure 11. maximum rated forward biased safe operating area figure 12. maximum avalanche energy vs. starting junction temperature 25 0 15 20 10 25 4 1 10 100 0 0.75 0.5 0.25 1.25 1.75 0.1 10 100 1 25 125 150 100 75 50 500 1 1.5 10 30 35 i d = ? 25 a t j = 25 c v gs v gs = 0 v v ds = 0 v t j = 25 c c rss c iss c oss c rss c iss v gs = ? 20 v single pulse t c = 25 c v dd = ? 30 v i d = ? 25 a v gs = ? 10 v v gs = 0 v t j = 25 c i d = ? 25 a t r t d(off) t d(on) t f r ds(on) limit thermal limit package limit q t q 2 q 1 10 ms 1 ms 100 s dc ? v gs ? v ds v ds
ntb25p06, NVB25P06 http://onsemi.com 5 package dimensions seating plane s g d ? t ? m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 ? b ? m b w w notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 418b ? 01 thru 418b ? 03 obsolete, new standard 418b ? 04. f 0.310 0.350 7.87 8.89 l 0.052 0.072 1.32 1.83 m 0.280 0.320 7.11 8.13 n 0.197 ref 5.00 ref p 0.079 ref 2.00 ref r 0.039 ref 0.99 ref m l f m l f m l f variable configuration zone r n p u view w ? w view w ? w view w ? w 123 d 2 pak 3 case 418b ? 04 issue k *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 8.38 5.080 dimensions: millimeters pitch 2x 16.155 1.016 2x 10.49 3.504
ntb25p06, NVB25P06 http://onsemi.com 6 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. sc illc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems in tended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scill c and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding th e design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resa le in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 ntb25p06/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative
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